Scaled T-Gate <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit
نویسندگان
چکیده
We demonstrate a passivated MESFET fabricated on (010) Si-doped $\beta $ -Ga 2 O xmlns:xlink="http://www.w3.org/1999/xlink">3 with breakdown over 2.4 kV without field plates, high Power Figure of Merit (PFOM), and estimated Huang’s Material (HMFOM), owing to low gate charge breakdown. MESFETs 13 notation="LaTeX">$\mu \text{m}$ source-drain spacing 75 nm channel exhibited current density 61 mA/mm, peak transconductance 27 mS/mm, on-resistance notation="LaTeX">${133}~\Omega \cdot \text {mm}$ . The device showed PFOM competitive state-of-the-art devices record HMFOM for device, commercial wide-band gap devices. This demonstrates high-performance as viable multi-kV high-voltage power switches.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2022
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2022.3182575